Advances in Research on 300mm Gallium Nitride-on-Si(111) NMOS Transistor and Silicon CMOS Integration

We discuss advances in our research on 300mm GaN NMOS by demonstrating GaN-on-Si(111) NMOS transistors achieving low R
_ON
=330Ω-μm; high ID,max=1.7mA/μm; BV
_DS
(at I
_D
=1μA/μm) of up to 90V with excellent R
_ON
=660Ω-μm; record f
_T
/f
_MAX
of 200/350GHz for GaN-on-Si; industry's best RF switch R
_on
C
_off
=55fs; and highest mmwave (28GHz) RF power amplifier peak PAE of 65% @ 19.5dBm saturated power. We discuss and compare the challenges in approaches to GaN and Si CMOS integration research including: (a) poly-silicon CMOS, (b) heterogeneous epitaxy of GaN and Si(111) CMOS, (c) wafer-to-wafer bonding [2], and (d) 3D monolithic Si(100) layer transfer using bonding techniques [1],[3].