Comparative Study of Temperature Sensitive Electrical Parameters for Junction Temperature Monitoring in SiC MOSFET and Si IGBT

Online monitoring of power device junction temperature is a viable technique to ensure reliable operation of mission critical power electronic converters. This paper presents a comprehensive study of major temperature sensitive electrical parameters (TSEPs) of SiC MOSFETs and compares them to those of Si IGBTs. These static and dynamic parameters include on-state resistance R
_on
, threshold voltage V
_TH
, turn-off delay time t
_d-off
, miller plateau voltage V
_GP
, and turn-on di/dt. The experimental results conclude that R
_on
and turn-on di/dt are more suitable TSEPs for SiC MOSFET while V
_TH
, t
_d-off
, and V
_GP
are more suitable for Si IGBT.