A Low-Cost High-Performance Transient Voltage Sensing Circuit for SiC MOSFETs

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) present good features on its switching speed, operation voltage and will future improve the performance of power electronic devices in medium and high power. However, it also puts forward new requirements for voltage measurement, which is high bandwidth under high voltage conditions. This paper proposes a high voltage and high bandwidth voltage sensing circuit that uses the characteristics of the same resistor with the same parasitic capacitance to meet the high frequency constraint of voltage sensing circuit. By using the proposed circuit in conjunction with an appropriate load compensation method, the withstand voltage rating of low-voltage and high-bandwidth passive probes can be extended to required levels. The performance of the voltage measurement is experimentally verified and compared.