33.2 A 600V GaN Active Gate Driver with Dynamic Feedback Delay Compensation Technique Achieving 22.5% Turn-On Energy Saving

Wide-band-gap power devices hold great promise for creating power-conversion systems that are smaller, faster and more energy efficient than silicon power devices. Benefiting from smaller parasitic capacitors and superior conductive characteristics of gallium-nitride (GaN) transistors, the switching frequency $(\mathrm{f}_{SW})$ of power converters can soar to several or even dozens of MHz. Meanwhile, the power efficiency can be significantly improved. However, increasing switching speed leads to large values of di/dt and dv/dt during turn-on transition period, which results in several reliability issues. The turn-on dv/dt will cause a displacement current to charge the $\mathrm{C}_{GD}$ Miller capacitance of the complementary switch in half bridge, inducing false turn-on or even shoot-through, and the isolation structure will be influenced by the common-mode transient noise generated by dv/dt. In addition, EMI noise and gate oscillation will be even more severe as the values of di/dt and dv/dt increase.