Characteristic C - V profile as a signature for electrostatic doping in FD-SOI

Metal-semiconductor-oxide-semiconductor (MSOS) structures form core parts of advanced FD-SOI devices. Extensive TCAD simulations of such MSOS structures show distinct C - V features, such as a characteristic capacitance hump, when contacted with extreme work function metals capable of supplying instant charge carriers in the lowly doped or undoped SOI layer. Such features are caused by volume inversion in the SOI layer, via electrostatic doping (ED), that becomes depleted for opposite biasing. The results show that the C - V analysis on relatively simple MSOS structures can be used to obtain the signature for ED in FD-SOI or alternative UTB devices.