High Dielectric Constant Sub - Nanometric Laminates of Binary Oxides for the Application in High-Density Capacitances

In recent years, laminates consisting of alternating layers of two binary oxides with layer thicknesses below 1 nm have attracted attention for their high dielectric constant values, reaching values of about 1000 in the case of Al
₂
O
₃
/TiO
₂
sub-nanometric laminates. This excellent dielectric performance of the sub-nanometric laminates relies on the Maxwell Wagner (MW) relaxation, exploiting the blocking of the mobile charge carriers of the semiconducting TiO
₂
at the interface with Al
₂
O
₃
. In this work, we explored the possibilities of enhancing the dielectric constant by MW relaxation in amorphous sub-nanometric laminates of Al
₂
O
₃
/ZnO. It was observed that the sublayer thickness and the interface of individual layers define the dielectric constant of laminates, and for further understanding, simulations and equivalent circuit analysis were conducted.