A Wideband Nonlinear Behavioral Model for D-Band Power Amplifiers Including Memory Effects

This paper presents a wideband nonlinear behavioral model applicable for D-band (110~170 GHz) power amplifiers including memory effects. Compared with conventional behavioral models which only consider low-pass envelope characteristics and is not suitable for wideband high-speed data transmission applications, the proposed model in this paper takes the bandwidth characteristics of high frequency carrier in the amplifier circuit into consideration. The frequency-sensitive model parameters are identified and set as frequency-dependent functions to ensure the wideband applicability of the model. A concise cascaded three-box Hammerstein-Wiener model structure is employed to model the dynamic memory effects and static memoryless nonlinearity of the amplifier. The proposed model can be conveniently implemented in the Advanced Design System (ADS) software for system-level simulations. A transistor-level compact model for the investigated D-band power amplifier is used to generate data for the behavioral model extraction and validation. Results show that the proposed model can accurately represent the wideband large-signal characteristics of the D-band power amplifier, which means that the proposed model is useful for terahertz transceiver design and system integration.