A SiGe BiCMOS W-Band Low Noise Amplifier with Active Bias Control and Internal Stabilization Technique

In this paper, a novel active biasing control scheme and an internal stage stabilization method are proposed to achieve a W-band low noise amplifier (LNA) with a minimum noise figure of 4.8 dB at 100GHz using 0.13 μm SiGe BiCMOS technology. By applying the active biasing scheme consisted of cascaded heterojunction bipolar transistors (HBTs), the isolation between direct-current (DC) port and radio frequency (RF) port is significantly improved. In order to enhance the stability of cascaded HBTs for W-band applications, stabilization circuits composed of inductor and resistor are inserted between the amplifying transistors. Finally, a prototype chip is fabricated in 0.13 μm SiGe BiCMOS with a compact size of only 0.45 × 0.58 mm2, the measured noise figure at 100GHz of this LNA is 4.79dB, and the power gain of this amplifier is above 15 dB across the operation frequency.