Schottky Barrier Double Surrounding Gate MOSFET for High-Frequency Implementation

This paper represents the study of analog performance for the Schottky Barrier (SB)- Double Surrounding Gate (DSG) -MOSFET for high-frequency applications. It analyzed, and the outcome so obtains has been contrasted with a concert of Schottky Barrier (SB) -Gate All Around (GAA)- MOSFET. The comparative study of the Schottky Barrier Double- Surrounding Gate (SB-DSG) MOSFET and Schottky Barrier Gate All Around (SB-GAA) MOSFET using ATLAS device simulator various parameters for different outer gate thicknesses (t
_m2
= 2nm, 3nm, 4nm) has been done. The observation made from the results that the SB-DSG MOSFET shows enhanced performance in terms of Drain Current., Current Gain, Transconductance (gm), output conductance (gd), Cut-off frequency, Gate Capacitance C
_GG
, and Unilateral Power Gain (UPG).