The Pros and Cons of GaN Family of Materials Compared with other Alternatives Regarding Optoelectronic Applications

In this paper, the advantages and disadvantages of gallium nitride materials compared with other alternatives (mainly SiC) in optoelectronic applications are introduced. Firstly, the classification and main application scenarios of gallium nitride materials are introduced. Secondly, the physical, chemical and optical characteristic properties of gallium nitride materials are introduced, and the excellent performance of gallium nitride materials in various properties is introduced. Thirdly, the paper introduces the following advantages of gallium nitride materials over SiC, including the ability to work at higher temperatures, greater energy bandwidth, newly developed electron transfer ability, higher energy density, etc. Fourthly, the following disadvantages of gallium nitride materials compared with SiC are introduced, including the insufficient raw material of GaN, the non-practicability of materials in the preparation process of GaN, and the much higher thermal conduction efficiency of SiC materials than GaN, etc. Through these overall analysis, the current research progress of GaN and the technical barriers it may encounter are obtained, which will provide clues for the subsequent research and progress of GaN materials.