A MMIC Low-Noise Amplifier realized with two different gate length GaN-on-Si technologies

In this work, a Ka-Band MMIC LNA designed with two different gate length GaN-on-Si devices is shown. Measurements show a gain higher than 29dB, 2.1dB average NF in the 34÷37.5GHz design band and a 1dBcp around 23-24dBm in the 35÷36.5GHz target band, showing a good suitability to high-gain, low-noise and medium-power requests. Comparison with GaN-on-SiC-based similar works confirms the feasibility of the adoption of GaN-on-Si technology for space-borne applications.