A Single Smart Cut POI Substrate Design for UHF, L and S Band Filters

The competition for the development of radio-frequency filters is still increasing with the imminence of the new telecommunication standard commercialization. Although investigated for years without real commercial breakthrough, the combination of piezoelectric films on Silicon is now receiving a very strong interest. In this contribution, we present the capability of Smart-Cut Piezo-On-Insulator (POI) substrates combining Lithium Tantalate and Silicon developed by SOITEC for the design and manufacturing of SAW filters. We particularly focus on one typical POI structure and we demonstrate its use for the design and fabrication of various filters taking advantage of the high performance modes enabled by the thin film perfect crystal structure on a frequency range starting from 400 MHz to 2.5 GHz and even more without changing the material stack.