A Full Ka-Band GaN-on-Si Low-Noise Amplifier

In this paper we present the design of a full Ka-band low-noise amplifier implemented in a 100-nm GaN HEMT on a high-resistivity silicon substrate technology. The amplifier achieves a noise figure of an average of 1.9 dB and a gain better than 23 dB for the whole Ka-band. Measured 1-dB output compression point was 22 dBm at 38.5 GHz.