0.3pA Dark Current and 0.65A/W Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer

We report p-i-n InGaAs/GaAs multi-quantum well nano-ridge waveguide photodetectors monolithically integrated on a 300-mm Si wafer. The devices exhibit low dark currents of 0.3 pA ( 1.36×10
^-7
A/cm
²
) at -1 V bias and internal responsivities of 0.65A/W at 1020nm wavelength.