A Fast Neutron Monitor Based on Single Event Effects in SRAMs Using Commercial off-the-Shelf Components

A fast neutron monitor based on Single Event Upsets in SRAM devices has been designed and tested for use on atmospheric neutron beamlines. Boards with a total memory capacity of up to 16 Mbit are irradiated, and the total number of bit-flips in the memory caused by fast neutron radiation effects is directly proportional to the neutron beam fluence. This system provides a count rate of 0.242 cps/Mbit. A scan of the beam was possible using this monitor, demonstrating that the beam profile is square and uniform.