Abstract:
Cross sections to cause single event upsets by heavy ions are sensitive to dopant concentration in diffusion and the structure of the raised layer especially in FDSOI. Du...Show MoreMetadata
Abstract:
Cross sections to cause single event upsets by heavy ions are sensitive to dopant concentration in diffusion and the structure of the raised layer especially in FDSOI. Due to the parasitic bipolar effect, radiation-hardened FFs using the stacked structure in FDSOI are not free from soft errors, which is consistent with measurement results by heavy-ion irradiation. Device-simulation results show that the cross section is proportional to the silicon thickness of the raised layer and inversely proportional to the doping concentration in drain.
Published in: 2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
Date of Conference: 16-21 September 2018
Date Added to IEEE Xplore: 26 January 2021
ISBN Information: