Buried Oxide on Extended Drain MOSFET (BOX EDMOS) for RF applications in FDSOI/Bulk Technology

We propose to utilize Buried Oxide (BOX) and Silicon-On-Insulator (SOI) layers as thick oxide and contact field plate on drain drift region of EDMOS. A thick BOX can reduce electric field to minimize hot carrier injection and gate-to-drain overlap capacitance for high cut-off frequency and better reliability. This device shows outstanding DC/RF performance and offer wide flexibility in device engineering for different RF or DC applications in baseline of FDSOI/Bulk CMOS process.