P-type Negative Capacitance FinFET with Subthreshold Characteristics and Driving Current Improvement

In this work, high performance negative capacitance (NC) p-type FinFETs (p-FinFETs) with a 3-nm-thick ferroelectric (FE) hafnium zirconium oxides (Hf
_0.5
Zr
_0.5
O
₂
) layer are fabricated based on a conventional high-κ metal gate (HKMG) FinFETs fabrication flow. The devices show improved drain induced barrier lowering (DIBL) and subthreshold swing (SS) values compared with those of conventional FinFETs with gate lengths (L
_G
s) from 20 nm to 500 nm.