Optimization of photoelectron in-situ sensing device in FD-SOI

Previously, we demonstrated a photoelectron in-situ sensing device (PISD) used as one-transistor active pixel sensor (APS) fabricated in advanced 22 nm FD-SOI technology. In this work, we employ TCAD simulation to systematically study the impact of device parameters on its performance. The buried oxide (BOX) thickness and active device length (L
_A
) exert a strong impact on the sensitivity and sensing range of the PISD.