Plasma induced charging damage: From appropriate MOS test structures to antenna design rules, a comprehensive process qualification procedure

The characterization and assessment of plasma processing induced damage as part of a process qualification is a complex task. And its completeness is of vital importance since the antenna design rules are a direct result from the characterization. For MOS transistors plasma charging can degrade various MOS transistor parameters significantly. Such degradation can cause reliability risks or yield loss for products. For a comprehensive qualification procedure a reliability stress must be performed to reveal any hidden damage. From antenna test structures to data analysis, a full picture is drawn in this work, in order to establish meaningful antenna design rules.