Optimization of Thermal Design for GaN-based Laser Diodes

Here, the temperature distribution of Ø 56 mm GaN-based laser diodes emitting at 515nm, 30 mW packaged with different materials and structures have been simulated using Finite Element Method approach. Results show that the substrate material plays an important role in determining the overall thermal resistance of the laser diodes. Afterwards, by changing the different layer thicknesses, the overall thermal resistances have been optimized, which can be reduced by 71.1%. The design and findings can reduce the junction temperature of GaN-based laser diodes under high current density and help to improve the reliability during the operation.