GaAs Solar Cell Grown by Dynamic Hydride Vapor Phase Epitaxy Using Nitrogen Carrier Gas

We present a single-junction GaAs solar cell grown by dynamic hydride vapor phase epitaxy using nitrogen carrier gas at a growth rate of 30 μm/h. The V
_OC
of 1.05 V is comparable to the V
_OC
of solar cells grown in our reactor with a hydrogen carrier, indicating that high material quality can be obtained with a nitrogen carrier.