Development of 1 eV InGaAsN PIN subcell for MJSC integration and space application

This paper reports on the optimization of 1 eV dilute nitride solar cells growth conditions. InGaAsN cells were grown by MBE under different conditions (V/III ratio, substrate temperature, surfactant) and were processed without post-growth annealing. Characterization results suggest that the V/III ratio should be kept above 10 and that using Bi as a surfactant does not improve the cell performances. Our best InGaAsN cells exhibit J
_sc
and V
_oc
values of 7.9 mA/cm
²
and 0.375 V respectively, under nm and without ARC.