Improved Temperature Coefficient Modeling through the Recombination Parameter $\gamma$

This study presents an injection dependent numerical model relating Shocldey-Read-Hall defect parameters in crystalline silicon with the recombination parameter γ. We demonstrate how the model can be used to predict γ for various single level defects. Additionally, we show that γ can be significantly influenced by the injection level, in contrast to what is commonly assumed. The injection dependence is found to correlate with the temperature sensitivity of the Shocldey-Read-Hall lifetime. Finally, we demonstrate that the model can be used to predict the temperature coefficient of the open circuit voltage without the use of a temperature dependent measurement, enabling more accurate temperature coefficient modeling.