11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF $C_{\mathrm{j}0}$

GaAs terahertz schottky barrier diode SBD has been a major technology in terahertz wave multiplexing, mixing and direct detection for decades, due to its high mobility and low capacity. In this paper, T-anode GaAs terahertz SBD was presented with its
$C_{\mathrm{j}0}$
scaled into sub-fF range. Scalling C-V measurement showed
$C_{\mathrm{j}0}$
without parasitic capacity reached 0.476fF for the
$0.5\mu\mathrm{m}$
anode diameter device. With the relative low series resistance R
s
of
$28.8\mathrm{\Omega}$
, cutoff frequency
$f_{\mathrm{t}}$
reached 11.6THz. The whole process was based on 4 inch GaAs wafer, guarantee stability and conformity in terahertz GaAs SBD integrated circuits working over 1THz.