Condition Monitoring of Multi-chip Parallel Presspack IGBT Devices Based on Current Distribution

Press-pack IGBTs (PPI) are key components in flexible DC transmission converter valves due to its advantages of compact structure, short circuit failure, and high power density. Given the harsh working condition of high voltage and large current, the reliability of PPI is extremely important for the stability of the power system. PPI is composed of multiple parallel sub-modules and the internal temperature distribution of the device is uneven for the problems of the manufacturing process, loop parasitic parameters, and thermal coupling. The differences in junction temperature will cause uneven distribution of static current among sub-modules, which aggravates partially aging of PPI. This paper explores the relationship between temperature and the distribution of static current in PPI modules and extracts characteristic parameters for condition monitoring, which will improve the reliability of PPI and the stability of the system of flexible DC power transmission.