Characteristics of a Dilute Nitride InGaAsN Double Quantum Well Laser at 1047 nm

Quantum well (QW) semiconductor lasers working at various wavelengths have been extensively used in the last decade due to their advantages in a wide range of application domains. One of the material systems used for fabricating these laser structures is InGaAsN with a very small percent of nitrogen, having useful applications for lasers working at long wavelengths and for high-efficiency multi-junction solar cells. We simulated the performance characteristics of a 1047 nm InGaAsN QW laser, specifically the I-V and L-I characteristics, energy band diagram, wave intensity distribution, threshold current, slope efficiency and external differential quantum efficiency, with the purpose of gaining a wide perspective on the structure performance in terms of some of its most important parameters and to constitute a useful reference for applications.