Design and Simulation of the Double-Snapback Dual Direction Silicon Controlled Rectifier Device with Embedded GGNMOS Structure

This work proposes a double-snapback dual direction silicon controlled rectifier(DS-DDSCR) electrostatic discharge protection(ESD) device by using the embedded GGNMOS structure. Based on the traditional SCR structure, it is improved by embedded structure and the double-snapback mechanism is used to achieve better voltage clamping capability. The working mechanism of proposed DS-DDSCR is simulated through equivalent circuit and two-dimensional device simulation. The device simulation results show that this double-snapback embedded structure can provide an effective design idea for ESD protection of standard BCD process.