GeTe Thin Film – Material for Optic Devices of Mid and Far-Infrared Ranges

Thin film phase-change materials (PCM) based on germanium telluride (GeTe, GeSbTe, GeSbSeTe) are widely used in photonic devices. In this work, we studied thin films GeTe grown on substrates with different temperatures; the obtained spectral and electrophysical characteristics of such films demonstrate a strong dependence on the growth conditions. The research results confirm the prospects for the use of this material in the development of controlled optical memory devices.