Design of semiconductor lasers for generation of high-power sub-ns laser pulses in the gain switching mode

For the first time, an analysis of a series of laser heterostructures with different active-region designs and cavity parameters is performed to solve the problem of generating sub-ns pulses with different characteristics (duration and peak optical power). For the study, semiconductor lasers of a mesa-stripe design with an aperture width of 100 μm and current pulses with a pulse base from 1 ns to 3 ns and an amplitude up to 50 A were used. It is shown that the minimum pulse width of the first relaxation peak was 50 ps at a peak power of up to 3 W with a combination of such parameters as a single QW, an optical confinement factor of 1.23 % and a cavity length of 700 μm. The use of multiple quantum well heterostructures provided the generation of pulses with a peak power of up to 30 W and a pulse width of 100-200 ps.