Strain-compensated active region of high-power laser diodes based on AlxGayIn1-x-yAs/InP

High-power laser diodes based on Al
_x
Ga
_y
In
_1-x-y
As/InP heterostructures emitting in the region of 1.5 - 1.6 μm are actively used in various fields of human activity. This requires continuous improvement of their performance in the considered spectral range. The use of an strain-compensated active region with a compression stress in the quantum well corresponding to +1.4 % and tensile stress in the barrier layer corresponding to -0.8 % allowed to increase of internal and external differential quantum efficiency and obtain laser diodes with cw output power 4.2 W at 15 A. The output power in a pulsed regime reached 20 W (100 ns, 5 kHz) at a pump current 80 A.