A Novel Methodology to Monitor Wafer Placement Shift in Laser Spike Anneal

For advanced technology node, laser anneal is widely used for ultra-shallow and low resistivity junctions which are needed to suppress short-channel effects and improve device performance. However, if wafer is not put in proper position, laser anneal will lead to PP source drain photo overlay residual abnormal, and even cause wafer broken. In this paper, a novel methodology is evaluated to earlier alert wafer placement shift in laser anneal which including measuring first laser scan region Rs fluctuation range control to detect the abnormal temperature spot combining with monitor camera installation, by this method wafer broken ratio is significantly reduced and productivity is improved eventually.