A Study of Image Contrast, Stochastic Defectivity, and Optical Proximity Effect in EUV Photolithographic Process Under Typical 5 nm Logic Design Rules

The introduction of Extremely Ultra-Violet (EUV) lithography in the photolithographic process can simplify process flow at 7 nm or more advanced technology nodes, which includes good linewidth and overlay budget control and reduction of hard mask layers. In a typical 5 nm logic process, the Contact-Poly Pitch (CPP) is 44-50 nm, the Minimum Metal Pitch (MPP) is 30-32 nm. And the overlay budget is estimated to be 2.5 nm (On Product Overlay, OPO). We have studied the process window of the 5 nm lithographic process with a self-developed RCWA algorithm based EUV simulation program and will present our results on process window and defectivity.