TCAD Simulation on Random Telegraphy Noise and Grain-Induced Fluctuation of 3D Nand Cell Transisitors

In this work, a TCAD simulation platform was set up to study the real poly-channel modeling, trap-induced noise and random grain doping in 3D NAND cell transistor. The random telegraph noise and size dependence was simulated and analyzed. Simulation results show that the RTN and grain size change have greater influence on threshold voltage (V
_T
) and channel current (I
_D
) in 3D NAND than doping fluctuation. It is shown that the instability caused by random doping cannot be ignored, too.