Investigation and Demonstration of Hot Carrier Effect in LDMOS Transistors with Ultra-Shallow Trench Isolation

A lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor with ultra-shallow trench isolation (USTI) is proposed in this work. The degradation of device induced by hot-carrier injection (HCI) in n-type LDMOS transistors in the drift region is fully investigated. It revealed that improvement of the relationship between the breakdown and specific on-resistance can be obtained without sacrificing of HCI degradation. Additionally, the physical mechanism behind the results is also analyzed from the technology computer-aided-design (TCAD) simulation.