Adsorption Behavior of SF6 Decomposed Components SO2, SOF2, SO2F2 on Rh-doped MoS2

It is essential to detect the characteristic gas products of SF
₆
decomposition for fault diagnosis of gas-insulated switchgear (GIS). The model of Rh doped MoS
₂
was built by Materials Studio software. The micro process of three SF
₆
partial dissociation products (SO
₂
, SOF
₂
, SO
₂
F
₂
) approaching the Rh-MoS
₂
surface and reaching a stable state was simulated. The modification effect of Rh doped MoS
₂
was studied by the key adsorption parameters such as the adsorption structure, bandgap, absorption energy and charge transfer. As a result, the electrical property and chemical activity are significantly improved in comparison with the pristine MoS
₂
monolayers by selecting the most stable Rh doping site. Simultaneously, it was found that Rh-MoS
₂
monolayer had good gas sensitivity to SO
₂
and SOF
₂
with chemical adsorption.