Variation Investigation of Junction-less Transistor with Side-wall Charge-plasma Structure Induced by Line Edge Roughness

In this work, the fluctuations of the electrical characteristics including ON -current, OFF -current, subthreshold swing and threshold voltage, due to line edge roughness (LER) for double-gate charge-plasma junctionless transistor (CPJLT) and side-wall charge-plasma junctionless transistor (S-CPJLT) are explored. Results shows that S-CPJLT has less fluctuations in ON -current while maintaining similar performance of other electrical characteristics. Besides, S-CPJLT has larger ON-current, smaller OFF-current on average. This work indicates that S-CPJLT has greater potential in electronic device development.