Influence of the acceptor-type trap on the characteristic of the short-channel GaN MOS-HEMT

In this work, the influences of the acceptor-type trap (located at GaN/insulator interface and GaN buffer layer) on the threshold voltage and 2-dimension electron gas (2DEG) density are analyzed for short-channel GaN MOS-HEMT. Particularly, the influence of the acceptor-type trap on short-channel effect in short-channel GaN MOS-HEMT is analyzed and modeled for the first time. The analyzed results have shown that the acceptor-type trap plays an important role on the threshold voltage, 2DEG density, and short-channel effect. The calculated results are well supported by the numerical simulation and experimental measurement, which verified the correctness and accuracy of the presented model to predict the dependence of threshold voltage, 2DEG density, and short-channel effect on acceptor-type trap.