Study on the hardening of single-event transient in D-type flip-flop based on InP HBT

A D-type flip-flop (D-FF) based on InP HBT working at a clock frequency of 40 GHz and a data rate of 20 Gbps is designed and hardened to resist single-event transient (SET). Based on experimental data of SET in InP HBT induced by pulsed laser, a mathematical model is carried out and the influence of SET on D-FF is studied through software simulation. The circuit is hardened by partial elimination of the effect of cross-coupling at the transistor level in the storage cell and the performance of the hardened circuit is analyzed. The result shows an effective improvement even at a pulsed laser energy of 100 pJ.