Static and Dynamic Simulation Study on 15 kV 4H-SiC p-Channel IGBTs

The static and dynamic characteristics of the 15 kV 4H-silicon carbide (SiC) p-channel insulated gate bipolar transistor (IGBT) are investigated by the numerical simulation. The effect of the JFET width (L
_JFET
) on the blocking voltage, the on-state performance and the capacitance characteristic are analyzed particularly. As the L
_JFET
is 10 μm, a high blocking voltage of -15.94 kV and a forward voltage drop of -7.5 V at the forward current of -10 A can be achieved. Meanwhile, the C
_ge
is 1.4 nF and the C
_gc
is about 4 pF at the V
_ce
of -5 kV. Furthermore, the turn-on time is about 120 ns and the turn-off time is about 620 ns at -5 kV voltage, respectively.