Floating Gate Perimeter Gated Single Photon Avalanche Diodes

This paper explores the effect of floating gate structures on the electric field distribution of perimeter gate single photon avalanche diodes using TCAD Sentaurus simulations. Physical models used for the simulation have been discussed extensively to expedite reproduction of simulation results in other simulation platforms. The simulations estimate the I-V characteristics of single-input and multiple-input floating gate devices as a function of applied floating gate voltage and studies the effect of gate oxide and polysilicon thickness on the device.