5G and AI Integrated High Performance Mobile SoC Process-Design Co-Development and Production with 7nm EUV FinFET Technology

We report on Qualcomm¯ Snapdragon™ 765 mobile Platform and world's first integrated 5G platform supporting both mmWave and sub-6 using industry-leading 7nm EUV FinFET technology. Snapdragon 765 unites 5G and AI to power select premium-tier experiences on a global scale. Snapdragon 765 exhibits 20% improvement in performance and 35% lower power consumption over its predecessor Snapdragon 730 (8nm FinFET) thanks to device performance boost with new technology integration feature (MDB), power-perf efficient design architecture enabled by dual poly pitch process, and low voltage logic/memory operation through process-design co-development. Further process-design co-optimization reduces CPU Vmin by 80mV, enabling premium-tier performance experience with integrated 5G and AI mobile SOC platform.