SoC Compatible 1T1C FeRAM Memory Array Based on Ferroelectric Hf0.5Zr0.5O2

This paper experimentally demonstrates fundamental memory array operation of a ferroelectric HfO
₂
-based 1T1C FeRAM. Metal/ferroelectric/metal (MFM) capacitors consisting of a TiN/ Hf
_0.5
Zr
_0.5
O
₂
(HZO)/TiN stack were optimized for a sub 500°C process. Structures revealed excellent performance such as remanent polarization, 2P
_T
> 40 μC/cm
²
endurance > 10
¹¹
cycles, and 10 years data retention at 85°C. Furthermore, the MFM capacitors were successfully integrated into a 64 kbit 1T1C FeRAM array including our dedicated circuit for array operation. Back-end-of-line (BEOL) wiring showed no degradation of the underlying CMOS logic. Program and read operation were properly controlled resulting in 100 % bit functionality at an operation voltage of 2.5 V and operating speed at 14 ns. This technology matches requirements of last level cash (LLC) and embedded non-volatile-memory (NVM) in low power System-on-a-Chip (SoC) for IoT applications.