High On-Current 2D nFET of 390 μA/μm at VDS = 1V using Monolayer CVD MoS2 without Intentional Doping

We demonstrate the highest nFET current of 390 μA/μ m at V
_DS
= 1 V based on CVD Mos
₂
mono layers without intentional doping. The transistor exhibits good subthreshold swing of 109 m V/ decade, large ION/IOFF ratio of 4 × 10
₈
, and nearly zero DIBL. The high on-current achieved in monolayer Mos
₂
nFET is mainly attributed to the thin EOT ~2 nm of HfO
_x
gate oxide, short gate length of 100 nm, and low contact resistance ~1.1 kω- μm.