Short-Channel Effects Improvement of Carbon Nanotube Field Effect Transistors

With the advancement of electronic device technology and the development of nanometer dimensions in this field, as well as decreasing dimensions for higher integration and better device performance, power consumption as well as more sophisticated functions require the use of material with physical and chemical properties. Suitable for nanometers, it is becoming increasingly popular as carbon nanotubes are a viable alternative. With the increase in the electric charge density, the emergence of quantum phenomena, such as quantum tunneling, has created problems for the creation of destructive and leaky currents. Meanwhile, structure simulation plays a key role in understanding and improving device performance. This article uses MOSCNT 1.0 software. This software is programmed with MATLAB code and is executable with MATLAB software The Poisson-Schrödinger equations can be solved automatically using the Non-Equilibrium Green Function (NEGF) by MOSCNT 1.0 software. In fact, MOSCNT 1.0 software presents a mathematical model describing the mechanism of Carbon Nanotube Field Effect Transistors (CNFETs) operation. Simulations by solving all equations are able to derive some of the characteristics of a carbon nanotube effect transistor, including I-V diagram.