A Modified High Frequency Rectifier with Substrate Voltage Compensation Techniques at 45 nm Technology for RF Energy Harvesting Application

Radio Frequency (RF) energy harvesting is gaining much attention in contemporary communications and the high frequency rectifier is the heart of such a system. To attain a high percentage conversion efficiency (PCE) at lower input power, the key challenge amongst several others is the design challenge. This paper presents a modified transmission gate (TG) based design of a high frequency rectifier with two substrate compensation techniques, viz. capacitor and MOS based compensation for RF energy harvesting which achieves a PCE upto 86% and 92% at - 5dBm respectively in its single stage implementation. This is observed to be highest in-class efficiency as compared to recently published works. The frequency responses with both the techniques depict a wide band performance covering all popular wireless bands. The dynamic power dissipations (DPD) observed are 12nW and 16nW at -5dB, whereas the leakage power (LP) is 20 x 10
^-51
W and zero respectively. Also this is achieved with minimal number of transistors, viz. 4 and 5 respectively.