A Threshold Voltage Compensated Wideband RF Energy Harvesting Rectifier at 45 nm Technology

Equipping a modern day communication system with RF energy harvesting capability is the need of the hour and to make this a reality a high frequency rectifier is indeed indispensable. To trap the real RF energy successfully the rectifier must be able to provide a sufficiently higher percentage conversion ratio (PCE) at a lower range of signal power. This paper presents a simplified 3-transistor design of a high frequency rectifier with a threshold voltage compensation techniques to achieve a PCE upto 85% at -2dBm in its single stage implementation. This can be stated to be one of the highest in-class efficiency as compared to recently reported designs. From the frequency response it is observed to exhibit wide band performance spanning almost all popular wireless bands. The dynamic power dissipation (DPD) is calculated to be 6.25pW at -2dB, whereas the leakage power (LP) is observed to be zero.