Vertical GeSn electro-absorption modulators grown on Silicon for the mid-infrared

We used GeSn layers with 6% and 13% of Sn grown on Ge in a 200 mm RPCVD tool to fabricate mid-infrared vertical electro-absorption light modulators. Light modulations of 1.5% and 1% at 21 kV/cm were achieved at 2.15 and 3.05 μm, respectively.