TM-Pass Polarizer for Ultradense High-Performance Photonic Integrated Circuits

The paper reports on the design of a silicon photonic TM-pass polarizer intended for photonic integrated circuits with a high component density. The device, whose design is compliant with the technological constraints imposed by a typical state-of-the-art silicon photonic process, exhibits a record IL of 0.05 dB @ 1.55 μm, a high ER of 38 dB @ 1.55 μm, and a broadband operation with IL<; 1.7 dB and ER>30 dB over 200 nm covering the S, C, and L bands.