Performance Analysis of Silicon and III-V Channel Material for Junctionless-Gate-All-Around Field Effect Transistor

The scaling down of device dimension beyond the Moore's Law era have introduce the use of new material and device architecture. This paper reports a comparative study between Silicon and III-V junctionless-gate-all-around (JGAA) transistor as an alternative approach to overcome the short channel effects (SCEs). The device is simulated and characterized using TCAD Sentaurus. The III-V semiconductor channel material applied are Gallium Nitrite (GaN) and Gallium Arsenide (GaAs). The device electrical performance was compared in terms of the threshold voltage (V
_th
), subthreshold slope (SS), drain current (I
_on
) and leakage current (I
_off
) extracted from the current-voltage characteristics. The results demonstrated a feasibility of using advanced device architecture using non-silicon material for future nanoelectronics application.